Instrukcja obsługi Microchip TC4428A
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 2004 Microchip Technology Inc. DS00799B-page 1
AN799
INTRODUCTION
There  are  many  MOSFET  technologies  and  silicon
processes in existence today, with new advances being
made  every  day.  To  make  a  generalized  statement
about matching a MOSFET driver to a MOSFET based
on voltage/current ratings or die sizes is very difficult, if
not impossible.
As  with  any  design  decision,  there  are  multiple  vari-
ables  involved  when  selecting  the  proper  MOSFET
driver  for  the  MOSFET  being  used  in  your  design.
Parameters such as input-to-output propagation delay,
quiescent current, latch-up immunity and driver current
rating must all be taken into account. Power dissipation
of  the  driver  will  also  effect  your  packaging  decision
and driver selection.
This Application Note discusses the details of MOSFET
driver  power  dissipation  in  relation  to  MOSFET  gate
charge and operating frequency. It also discusses how
to  match MOSFET driver current  drive  capability and
MOSFET  gate  charge  based  on  desired  turn-on  and
turn-off times of the MOSFET.
Microchip offers many variations of MOSFET drivers in
various packages, which allows the designer to select
the optimal MOSFET driver for the MOSFET(s) being
used in their application.
POWER DISSIPATION IN A MOSFET 
DRIVER
Charging  and  discharging  the  gate  of  a  MOSFET
requires the same amount of energy, regardless of how
fast  or  slow  (rise  and  fall  of  gate  voltage)  it  occurs.
Therefore, the current drive capability of the MOSFET
driver does not effect the power dissipation in the driver
due to the capacitive load of the MOSFET gate.
There  are  three  elements  of  power  dissipation  in  a
MOSFET driver:
1. Power  dissipation  due  to  the  charging  and
discharging  of  the  gate  capacitance  of  the
MOSFET.
EQUATION 1:
2. Power dissipation due to quiescent current draw
of the MOSFET driver.
EQUATION 2:
3. Power  dissipation  due  to  cross-conduction
(shoot-through) current in the MOSFET driver.
EQUATION 3:
As deduced from the equations above, only one of the
three  elements  of  power  dissipation  is  due  to  the
charging  and  discharging  of  the  MOSFET  gate
capacitance.  This  portion  of  the  power  dissipation  is
typically  the  highest,  especially  at  lower  switching
frequencies.
In  order  to calculate a  value for  Equation 1,  the  gate
capacitance  of  the  MOSFET  is  required.  The  gate
capacitance of a MOSFET is comprised of two capaci-
tances:  the  gate-to-source  capacitance  and the gate-
to-drain  capacitance (Miller  Capacitance). A  common
mistake  is  to use  the  Input  Capacitance  rating of  the
MOSFET  (CISS)  as  the  total  gate  capacitance  of  the
MOSFET.  The  proper  method  for  determining  gate
capacitance is to look at the Total Gate Charge (QG) in
the MOSFET data sheet.  This information is  typically
shown in the Electrical Characteristics table and as a
typical  characteristics  curve  in  any  MOSFET  data
sheet.
Author: Jamie Dunn
Microchip Technology Inc.
PCCGVDD
2F××=
Where:
CG= MOSFET Gate Capacitance
VDD = Supply Voltage of MOSFET Driver (V)
F = Switching Frequency
PQIQH D IQL 1 D–( )×+×( ) VDD
×=
Where:
IQH = Quiescent current of the driver with 
the input in the high state
D = Duty cycle of the switching waveform
IQL = Quiescent current of the driver with
the input in the low state
PSCC F VDD
××=
Where:
CC = Crossover constant (A*sec)
Matching MOSFET Drivers to MOSFETs
Specyfikacje produktu
| Marka: | Microchip | 
| Kategoria: | Niesklasyfikowane | 
| Model: | TC4428A | 
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