Instrukcja obsługi Texas Instruments LMC660CM/NOPB
Texas Instruments
Niesklasyfikowane
LMC660CM/NOPB
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LMC660
www.ti.com
SNOSBZ3D –APRIL 1998– REVISED MARCH 2013
LMC660 CMOS Quad Operational Amplier
Check for Samples: LMC660
1
FEATURES DESCRIPTION
The LMC660 CMOS Quad operational amplier is
2
• Rail-to-Rail Output Swing ideal for operation from a single supply. It operates
• Specied for 2 k and 600 LoadsΩ Ω from +5V to +15.5V and features rail-to-rail output
• High Voltage Gain: 126 dB swing in addition to an input common-mode range
that includes ground. Performance limitations that
• Low Input Oset Voltage: 3 mV have plagued CMOS ampliers in the past are not a
• Low Oset Voltage Drift: 1.3 V/°Cμproblem with this design. Input VOS, drift, and
• Ultra Low Input Bias Current: 2 fA broadband noise as well as voltage gain into realistic
loads (2 k and 600 ) are all equal to or better thanΩ Ω
• Input Common-Mode Range Includes V−
widely accepted bipolar equivalents.
• Operating Range from +5V to +15.5V Supply
This chip is built with TI's advanced Double-Poly
• ISS = 375 A/Amplier; Independent of Vμ+
Silicon-Gate CMOS process.
• Low Distortion: 0.01% at 10 kHz
See the LMC662 datasheet for a dual CMOS
• Slew Rate: 1.1 V/ sμoperational amplier with these same features.
APPLICATIONS
• High-Impedance Buer or Preamplier
• Precision Current-to-Voltage Converter
• Long-Term Integrator
• Sample-and-Hold Circuit
• Peak Detector
• Medical Instrumentation
• Industrial Controls
• Automotive Sensors
Connection Diagrams
Figure 1. 14-Pin SOIC/PDIP Figure 2. LMC660 Circuit Topology (Each
Amplier)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LMC660
SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)
Dierential Input Voltage ±Supply Voltage
Supply Voltage 16V
Output Short Circuit to V+See(2)
Output Short Circuit to V−See(3)
Lead Temperature (Soldering, 10 sec.) 260°C
Storage Temp. Range 65°C to +150°C−
Voltage at Input/Output Pins (V+) + 0.3V, (V−) 0.3V−
Current at Output Pin ±18 mA
Current at Input Pin ±5 mA
Current at Power Supply Pin 35 mA
Power Dissipation See(4)
Junction Temperature 150°C
ESD tolerance (5) 1000V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specic performance limits. For ensured specications and test
conditions, see the Electrical Characteristics. The ensured specications apply only for the test conditions listed.
(2) Do not connect output to V
+when V+is greater than 13V or reliability may be adversely aected.
(3) Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or
multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30
mA over long term may adversely aect reliability.
(4) The maximum power dissipation is a function of T
J(MAX),θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD= (TJ(MAX) −TA)/θJA
.
(5) Human Body Model is 1.5 k in series with 100 pF.Ω
Operating Ratings
Temperature Range
LMC660AI 40°C T− ≤ J≤+85°C
LMC660C 0°C T≤J≤+70°C
Supply Voltage Range 4.75V to 15.5V
Power Dissipation See(1)
Thermal Resistance (θJA)(2)
14-Pin SOIC 115°C/W
14-Pin PDIP 85°C/W
(1) For operating at elevated temperatures the device must be derated based on the thermal resistance θ
JA with PD= (TJ−TA)/θJA.
(2) All numbers apply for packages soldered directly into a PC board.
2Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LMC660
LMC660
www.ti.com
SNOSBZ3D –APRIL 1998– REVISED MARCH 2013
DC Electrical Characteristics
Unless otherwise specied, all limits ensured for TJ= 25°C. limits apply at the temperature extremes. VBoldface += 5V, V−=
0V, VCM = 1.5V, VO= 2.5V and RL> 1M unless otherwise specied.Ω
LMC660AI LMC660C
Parameter Test Conditions Typ(1) Units
Limit (1) Limit(1)
Input Oset Voltage 1 3 6 mV
3.3 6.3 max
Input Oset Voltage Average Drift 1.3 V/°Cμ
Input Bias Current 0.002 pA
4 2 max
Input Oset Current 0.001 pA
2 1 max
Input Resistance >1 TeraΩ
Common Mode 0V V≤CM ≤12.0V 83 70 63 dB
Rejection Ratio V+= 15V min68 62
Positive Power Supply 5V V≤+≤15V 83 70 63 dB
Rejection Ratio VO= 2.5V min68 62
Negative Power Supply 0V V≤−≤ −10V 94 84 74 dB
Rejection Ratio min83 73
Input Common-Mode V+= 5V & 15V 0.4 0.1 0.1 V− − −
Voltage Range For CMRR 50 dB max≥0 0
V+−1.9 V+−2.3 V+−2.3 V
V+−2.5 V+−2.4 min
Large Signal RL= 2 kΩ(2) 2000 440 300 V/mV
Voltage Gain Sourcing min400 200
Sinking 500 180 90 V/mV
120 80 min
RL= 600Ω(2) 1000 220 150 V/mV
Sourcing min200 100
Sinking 250 100 50 V/mV
60 40 min
Output Swing V+= 5V 4.87 4.82 4.78 V
RL= 2 k to VΩ+/2 min4.79 4.76
0.10 0.15 0.19 V
0.17 0.21 max
V+= 5V 4.61 4.41 4.27 V
RL= 600 to VΩ+
/2 min4.31 4.21
0.30 0.50 0.63 V
0.56 0.69 max
V+= 15V 14.63 14.50 14.37 V
RL= 2 k to VΩ+/2 min14.44 14.32
0.26 0.35 0.44 V
0.40 0.48 max
V+= 15V 13.90 13.35 12.92 V
RL= 600 to VΩ+
/2 min13.15 12.76
0.79 1.16 1.45 V
1.32 1.58 max
(1) Typical values represent the most likely parametric norm. Limits are specied by testing or correlation.
(2) V
+= 15V, VCM = 7.5V and RLconnected to 7.5V. For Sourcing tests, 7.5V V≤O≤ ≤11.5V. For Sinking tests, 2.5V VO≤7.5V.
Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LMC660
Specyfikacje produktu
| Marka: | Texas Instruments |
| Kategoria: | Niesklasyfikowane |
| Model: | LMC660CM/NOPB |
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